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| 50 -10V 40 -8V 25 -6V -5.5V -5V Vds=-5V 20 -Id (A) 20 -Id(A) -4.5V 30 15 10 125C 10 Vgs=-4V 5 25C 0 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 30 25 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -Vgs(Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance Id=-10A 1.4 Vgs=-10V Rds(on) (m:) 20 15 10 Vgs=-6V 1.2 Vgs=-4.5V 1 Vgs=-10V 5 0 0 5 10 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 60 50 Id=-10A 1.0E+01 1.0E+00 1.0E-01 125C Rds(on) (m:) 40 -Is (A) 25C 125C 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 1.0E-06 30 20 10 0 0 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=-15V Id=-12A 8 3000 2500 Ciss Capacitance (pF) -Vgs (Volts) 2000 1500 Coss 1000 500 0 Crss 6 4 2 0 0 5 10 15 20 25 30 35 40 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150C Ta=25C 40 100Ps 1ms 10ms 0.1s 10Ps 30 Tj(max)=150C Ta=25C -Id (Amps) Power (W) Rds(on) 10.0 limited 20 1.0 1s 10s DC 10 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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